SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Aug 27, 2020
app pub date -
Feb 18, 2020
filing date -
Feb 22, 2019
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To provide a semiconductor device having a lower on-resistance while keeping a sufficient high breakdown voltage. A semiconductor device comprises a conductive substrate, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a body electrode, a drain electrode, a source electrode, and a gate electrode. The first semiconductor layer, the second semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer are Group III nitride semiconductor layers. The third semiconductor layer has a carrier concentration lower than that of the second semiconductor layer.
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