FIELD-EFFECT TRANSISTOR WITH A TOTAL CONTROL OF THE ELECTRICAL CONDUCTIVITY ON ITS CHANNEL
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United States of America Patent
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Aug 20, 2020
app pub date -
Sep 27, 2018
filing date -
Sep 27, 2017
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Abstract
The first object of the invention is directed to field-effect gate transistor comprising (a) a substrate, (b) a source terminal, (c) a drain terminal, and (d) a channel between the source terminal and the drain terminal, the channel being a layer of CuxCryO2 in which the y/x ratio is superior to 1. The field-effect gate transistor is remarkable in that the channel of CuxCryO2 presents a gradient of holes concentration. The second object of the invention is directed to a method for laser annealing a field-effect gate transistor in accordance with the first object of the invention.
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