Semiconductor device and method of manufacturing the same
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United States of America Patent
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Dec 8, 2020
Grant Date -
Jul 23, 2020
app pub date -
Apr 7, 2020
filing date -
Sep 11, 2017
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor device and method of manufacturing the same is provided in the present invention. The method includes the step of forming first mask patterns on a substrate, wherein the first mask patterns extend in a second direction and are spaced apart in a first direction to expose a portion of first insulating layer, removing the exposed first insulating layer to form multiple recesses in the first insulating layer, performing a surface treatment to the recess surface, filling up the recesses with a second insulating layer and exposing a portion of the first insulating layer, removing the exposed first insulating layer to form a mesh-type isolation structure, and forming storage node contact plugs in the openings of mesh-type isolation structure.
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