HARD MASK AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

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United States of America Patent

APP PUB NO 20200227273A1
SERIAL NO

16743466

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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There is provided a hard mask formed on a substrate for manufacturing a semiconductor device, the hard mask including a film made of a compound which is composed of Ru and an element selected from Ti, Zr, Hf, V, Nb, Ta, Mo, W, and Si.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITED3-1 AKASAKA 5-CHOME MINATO-KU TOKYO 1076325 ?1076325

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
FURUKAWA, Shinji Tokyo, JP 47 290
ISHIBASHI, Shota Nirasaki City, JP 17 18
TOSHIMA, Hiroyuki Nirasaki City, JP 33 404

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