Heat shielding member, single crystal pulling apparatus, and method of producing single crystal silicon ingot
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United States of America Patent
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Oct 18, 2022
Grant Date -
Jul 16, 2020
app pub date -
Mar 16, 2018
filing date -
Apr 5, 2017
priority date (Note) -
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status (Latency Note)
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Abstract
Provided is a heat shielding member, a single crystal pulling apparatus, and a method of producing a single crystal silicon ingot, which can expand the margin of the crystal pulling rate with which a defect-free single crystal silicon can be obtained. A heat shielding member is provided in a single crystal pulling apparatus, the heat shielding member including a cylindrical tubular portion surrounding an outer circumferential surface of the single crystal silicon ingot; and a ring-shaped projecting portion under the tubular portion. The projecting portion has an upper wall, a bottom wall, and two vertical walls, a heat insulating material with a ring shape is provided in the space surrounded by those walls; and a gap between the vertical wall adjacent to the single crystal silicon ingot and the heat insulating material.
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