SHORT WAVELENGTH INFRARED OPTOELECTRONIC DEVICES HAVING A DILUTE NITRIDE LAYER
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United States of America Patent
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Issued Date -
Jul 2, 2020
app pub date -
Mar 9, 2020
filing date -
Sep 27, 2017
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Abstract
Semiconductor optoelectronic devices having a dilute nitride active layer are disclosed. In particular, the semiconductor devices have a dilute nitride active layer with a bandgap within a range from 0.7 eV and 1 eV. Photodetectors comprising a dilute nitride active layer have a responsivity of greater than 0.6 A/W at a wavelength of 1.3 μm.
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