MEMORY DEVICE INCLUDING ARITHMETIC CIRCUIT AND NEURAL NETWORK SYSTEM INCLUDING THE SAME

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United States of America Patent

APP PUB NO 20200160157A1
SERIAL NO

16522920

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Abstract

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Provided is a memory device that includes a memory bank including a plurality of memory cells arranged in a region where a plurality of word lines and a plurality of bit lines of the memory device intersect each other, a sense amplifier configured to amplify a signal transmitted through selected bit lines among the plurality of bit lines, and an arithmetic circuit configured to receive a first operand from the sense amplifier, receive a second operand from outside the memory device, and perform an arithmetic operation by using the first operand and the second operand, based on an internal arithmetic control signal generated in the memory device.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hwang, Young-Nam Hwaseong-si, KR 27 864
KIM, CHAN-KYUNG Hwaseong-si, KR 45 721
Kim, Jin-Min Seoul, KR 20 131
Kim, Soon-Young Hwaseong-si, KR 10 186
Lee, Sang-Kil Seongnam-si, KR 62 365
Min, Jae-Hong Yongin-si, KR 5 36

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