BELOW MELTING TEMPERATURE FORMATION OF HIGH-DENSITY POLYCRYSTALLINE SILICON
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United States of America Patent
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May 21, 2020
app pub date -
Jul 25, 2019
filing date -
Jul 25, 2018
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A method is described for the atmospheric pressure sintering of silicon to form high density polycrystalline silicon preforms that optionally may be annealed at higher temperatures to form wafers suitable for use in solar cells. The preforms are formed from nanometer scale, high surface area silicon that is sintered to form the near “full density” polycrystalline silicon preforms. Subsequent annealing of the preforms may be used to grow grains suitable for use as wafers for solar cells. The polycrystalline silicon may be used directly to form semiconductor structures other than wafers suitable for solar cells, such as to form electrodes, electrode surfaces, and thermoelectric devices.
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