High electron mobility transistor device and manufacturing method thereof
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 5, 2022
Grant Date -
May 7, 2020
app pub date -
Nov 3, 2019
filing date -
Nov 5, 2018
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A high electron mobility transistor (HEMT) device and a manufacturing method thereof are provided. The HEMT device includes a channel layer, a barrier layer, a first gate electrode, a first drain electrode and a first source electrode. The channel layer is disposed on a substrate. A surface of a portion of the channel layer within a first region of the HEMT device includes a polar plane and a non-polar plane. The barrier layer is conformally disposed on the channel layer. The first gate electrode is disposed on the barrier layer, and located within the first region. The first drain electrode and the first source electrode are disposed within the first region, and located at opposite sides of the first gate electrode.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully