SEMICONDUCTOR DEVICE AND METHOD OF FORMING P-TYPE NITRIDE SEMICONDUCTOR LAYER
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United States of America Patent
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May 7, 2020
app pub date -
Nov 5, 2019
filing date -
Nov 7, 2018
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Abstract
A semiconductor device includes a p-type nitride semiconductor layer, the p-type nitride semiconductor layer including an Al-containing nitride semiconductor layer and an Al-containing compound layer containing Al and C as main constituent elements and provided on the surface of the Al-containing nitride semiconductor layer.
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