HIGH ELECTRON MOBILITY TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Issued Date -
Apr 9, 2020
app pub date -
May 8, 2019
filing date -
Oct 4, 2018
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Abstract
A high electron mobility transistor (HEMT) device including a substrate, a first channel layer, a second channel layer, a cap layer, a first metal nitride layer, a gate, a source, and a drain is provided. The first channel layer is disposed on the substrate. The second channel layer is disposed on the first channel layer. The cap layer is disposed on the second channel layer and exposes a portion of the second channel layer. The first metal nitride layer is disposed on the cap layer. The gate is disposed on the first metal nitride layer. The width of the first metal nitride layer is greater than or equal to the width of the gate. The source and the drain are disposed on the second channel layer at two sides of the gate.
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