POSITION MEASURING METHOD, POSITION MEASURING APPARATUS, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
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United States of America
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Mar 12, 2020
app pub date -
Jan 31, 2019
filing date -
Jan 31, 2019
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According to one embodiment, in a position measuring method, alignment measurement in a light exposure process is executed by irradiating a first mark with light having a wavelength of λ1, with respect to a processing object that includes a first layer and a second layer stacked above a substrate and a resist applied on the second layer. The first mark is provided in the first layer and includes a plurality of segments arranged at a pitch smaller than a resolution limit given by light having the wavelength of λ1. Then, overlay measurement is executed by irradiating the first mark and a second mark with light having a wavelength of λ2 shorter than the wavelength of λ1. The second mark has been formed by performing a light exposure and development process to the resist, and includes a plurality of segments arranged at the pitch.
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