Integrated Assemblies Which Include Non-Conductive-Semiconductor-Material and Conductive-Semiconductor-Material, and Methods of Forming Integrated Assemblies
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United States of America
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Jan 14, 2020
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Jan 23, 2020
app pub date -
Jul 19, 2018
filing date -
Jul 19, 2018
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Abstract
Some embodiments include an integrated assembly which has digit-line-contact-regions laterally spaced from one another by intervening regions. Non-conductive-semiconductor-material is over the intervening regions. Openings extend through the non-conductive-semiconductor-material to the digit-line-contact-regions. Conductive-semiconductor-material-interconnects are within the openings and are coupled with the digit-line-contact-regions. Upper surfaces of the conductive-semiconductor-material-interconnects are beneath a lower surface of the non-conductive-semiconductor-material. Metal-containing-digit-lines are over the non-conductive-semiconductor-material. Conductive regions extend downwardly from the metal-containing-digit-lines to couple with the conductive-semiconductor-material-interconnects. Some embodiments include methods of forming integrated assemblies.
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