METHOD FOR EVALUATING QUALITY OF SIC SINGLE CRYSTAL BODY ANDMETHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL INGOT USING THE SAME
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United States of America
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Jan 9, 2020
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Mar 29, 2018
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Mar 29, 2018
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A method for evaluating the quality of a SiC single crystal by a non-destructive and simple method; and a method for producing a SiC single crystal ingot with less dislocation and high quality with good reproducibility utilizing the same. The method for evaluating the quality of a SiC single crystal body is based on the graph of a second polynomial equation obtained by differentiating a first polynomial equation, the first polynomial equation approximating the relation between a peak shift value and a position of the measurement point and the peak shift value being obtained by an X-ray rocking curve measurement. The method for producing a SiC single crystal ingot manufactures a SiC single crystal ingot by a sublimation recrystallization method using, as a seed crystal, the SiC single crystal body evaluated by the evaluation method.
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