SEMICONDUCTOR SUBSTRATE
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
N/A
Issued Date -
Jan 2, 2020
app pub date -
Jul 13, 2017
filing date -
Jul 13, 2017
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A technique related to a bonded semiconductor substrate capable of reducing an interface resistance is provided. The semiconductor substrate comprises a single-crystalline SiC substrate and a polycrystalline SiC substrate. The single-crystalline SIC substrate and the polycrystalline SiC substrate are bonded. A bonded region of the single-crystalline SiC substrate and the polycrystalline SiC substrate contains 1×1021 (atoms/cm3) or more of particular atoms.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully