SHIFTING OF PATTERNS TO REDUCE LINE WAVINESS
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United States of America
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Issued Date -
Jan 2, 2020
app pub date -
Jun 28, 2018
filing date -
Jun 28, 2018
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Abstract
Embodiments described herein provide a method shifting mask pattern data during a digital lithography process to reduce line waviness of an exposed pattern. The method includes providing a mask pattern data having a plurality of exposure polygons to a processing unit of a digital lithography system. The processing unit has a plurality of image projection systems that receive the mask pattern data. Each image projection system corresponds to a portion of a plurality of portions of a substrate and receives an exposure polygon corresponding to the portion. The substrate is scanned under the plurality of image projection systems and pluralities of shots are projected to the plurality of portions while shifting the mask pattern data. Each shot of the pluralities of shots is inside the exposure polygon corresponding to the portion.
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