APPARATUS FOR GROWING SINGLE CRYSTALLINE INGOT AND METHOD FOR GROWING SAME

Number of patents in Portfolio can not be more than 2000

United States of America

SERIAL NO

16554295

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Abstract

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The present invention relates to an apparatus for growing a single crystal ingot capable of uniformly controlling an oxygen concentration in a longitudinal direction and a radial direction of a single crystal ingot by uniformly maintaining a convection pattern on a silicon melt interface, and a method for growing the same. In an apparatus for growing a single crystal ingot and a method for growing the same according to the present invention, a horizontal magnet is positioned to be movable up and down by a magnet moving unit around a crucible, so that a maximum gauss position (MGP) is positioned to be higher than the silicon melt interface and simultaneously, a rate of increase in the MGP is controlled to 3.5 mm/hr to 6.5 mm/hr, and thus it possible to secure simplicity and symmetry of convection on the silicon melt interface. Accordingly, in the present invention, it is possible to reduce an Oi deviation and a BMD deviation in a longitudinal direction and a radial direction of a single crystal ingot, thereby improving quality.

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Patent Owner(s)

Patent OwnerAddress
SK SILTRON CO LTDGUMI-SI GYEONGSANGBUK-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KIM, Jung-Ryul Gumi-si, KR 5 16
KIM, Sang-Hee Gumi-si, KR 41 903
LEE, Ho-Jun Gumi-si, KR 92 563
LEE, Hong-Woo Gumi-si, KR 76 757
SONG, Do-Won Gumi-si, KR 5 16

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