OPTIMIZATION OF A LITHOGRAPHY APPARATUS OR PATTERNING PROCESS BASED ON SELECTED ABERRATION

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United States of America

SERIAL NO

16332075

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Abstract

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A method including obtaining a selected component of optical aberration of or for a lithography apparatus, under a processing condition; computing an approximate of a cost function, based on the selected component; and producing an adjustment of the lithography apparatus or a patterning process that uses the lithography apparatus, based on the approximate of the cost function.

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Patent Owner(s)

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ASML NETHERLANDS B VP O BOX 324 VELDHOVEN 5500 AH

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HANSEN, Steven George Phoenix, US 38 767
LYAKHOVA, Kateryna Stanislavovna Veldhoven, NL 1 6
VAN, ADRICHEM Paulus Jacobus Maria Wijchen, NL 24 34

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