GROUP 13 ELEMENT NITRIDE CRYSTAL SUBSTRATE AND FUNCTION ELEMENT
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United States of America
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May 29, 2018
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May 29, 2018
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Abstract
A crystal substrate 1 includes an underlying layer 2 and a thick film 3. The underlying layer 2 is composed of a crystal of a nitride of a group 13 element and includes a first main face 2a and a second main face 2b. The thick film 3 is composed of a crystal of a nitride of a group 13 element and provided over the first main face of the underlying layer. The underlying layer 2 includes a low carrier concentration region 5 and a high carrier concentration region 4 both extending between the first main face 2a and the second main face 2b. The low carrier concentration region 5 has a carrier concentration of 1017/cm3 or lower and a defect density of 107/cm2 or lower. The high carrier concentration region 4 has a carrier concentration of 1019/cm3 or higher and a defect density of 108/cm2 or higher. The thick film 3 has a carrier concentration of 1018/cm3 or higher and 1019/cm3 or lower and a defect density of 107/cm2 or lower.
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