Nitride semiconductor substrate and method for manufacturing same
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United States of America Patent
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Aug 4, 2020
Grant Date -
Nov 21, 2019
app pub date -
Nov 8, 2017
filing date -
Nov 8, 2016
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Abstract
A nitride semiconductor substrate includes a sapphire substrate and a nitride semiconductor layer formed thereon and containing a group III element including Al and nitrogen as a main component. A surface of the sapphire substrate where the nitride semiconductor layer is formed includes recesses having a maximum opening size of from 2 nm to 60 nm in an amount of from 1×109 pieces to 1×1011 pieces per cm2. The recesses and surfaces immediately above the recesses form spaces. Of a surface of the nitride semiconductor layer on the sapphire substrate side, a height difference ΔH between a surface immediately above of each recess and a surface in contact with a flat surface is 10 nm or less. A portion of the nitride semiconductor layer above each recess has a crystalline structure produced by growth along a polar plane of the group III element.
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