SYSTEMS, METHODS, AND APPARATUS FOR MEMORY CELLS WITH COMMON SOURCE LINES
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United States of America Patent
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Oct 17, 2019
app pub date -
Jan 10, 2019
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Dec 2, 2013
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Abstract
A method for operating a memory device includes the steps of providing a first voltage to a first transistor of a first memory cell and a third transistor of a second memory cell, providing a second voltage to a gate of a second transistor of the first memory cell and a gate of a fourth transistor of the second memory cell, and providing a third voltage to a gate of the first transistor of the first memory cell and a gate of the third transistor of the second memory cell. Other embodiments are also described.
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