EPITAXIAL AIN/cREO STRUCTURE FOR RF FILTER APPLICATIONS
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Oct 3, 2019
app pub date -
Jun 19, 2017
filing date -
Jun 19, 2016
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
Proposed is a layer structure (1100, 1030) comprising a crystalline piezoelectric III-N layer (1110, 1032) epitaxially grown over a metal layer which is epitaxially grown over a rare earth oxide layer on a semiconductor (1102, 1002). The rare earth oxide layer includes at least two discrete portions (1104, 1004), and the metal layer includes at least one metal portion (1108, 1006) that partially overlaps adjacent discrete portions, preferably forming a bridge over an air gap (1008), particularly suitable for RF filters.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully