MASK BLANK, PHASE SHIFT MASK, METHOD OF MANUFACTURING PHASE SHIFT MASK, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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United States of America Patent
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Oct 3, 2019
app pub date -
Sep 4, 2017
filing date -
Sep 26, 2016
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Abstract
A mask blank for a phase shift mask having a phase shift film on a transparent substrate. The phase shift film generates a phase difference of 150 degrees or more and 200 degrees or less and transmits exposure light of an ArF excimer laser at a transmittance of 10% or more. The film has a low transmitting layer and a high transmitting layer, stacked alternately to form a total of six or more layers from a side of the transparent substrate. The low transmitting layer is made of a material containing silicon and nitrogen and having a nitrogen content of 50 atom % or more. The high transmitting layer is made of a material containing silicon and oxygen and having an oxygen content of 50 atom % or more. The low transmitting layer has a thickness greater than that of the high transmitting layer, which has a thickness of 4 nm or less.
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