Method for forming complementary doped semiconductor regions in a semiconductor body

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10903079
APP PUB NO 20190287804A1
SERIAL NO

16351256

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A method includes: forming first and second trenches in a semiconductor body; forming a first material layer on the semiconductor body in the first and second trenches such that a first residual trench remains in the first trench and a second residual trench remains in the second trench; removing the first material from the second trench; and forming a second material layer on the first material layer in the first residual trench and on the semiconductor body in the second trench. The first material layer includes dopants of a first doping type and the second material layer includes dopants of a second doping type. The method further includes diffusing dopants from the first material layer in the first trench into the semiconductor body to form a first doped region, and from the second material layer in the second trench into the semiconductor body to form a second doped region.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES DRESDEN GMBH & CO KGKOENIGSBRUECKER STR 180 DRESDEN 01099

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gross, Thomas Sinzing, DE 65 456
Gruber, Hermann Woerth a. D., DE 61 496
Hirler, Franz Isen, DE 437 5348
Meiser, Andreas Sauerlach, DE 155 859
Rochel, Markus Radebeul, DE 6 20
Schloesser, Till Munich, DE 116 1665
Weber, Detlef Ottendorf-Okrilla, DE 18 56
Weis, Rolf Dresden, DE 146 1480

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Jul 26, 2028
11.5 Year Payment $7400.00 $3700.00 $1850.00 Jul 26, 2032
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00