Semiconductor substrate, gallium nitride single crystal, and method for producing gallium nitride single crystal

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United States of America Patent

PATENT NO 11162189
APP PUB NO 20190271097A1
SERIAL NO

16289864

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Abstract

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There is provided a semiconductor substrate including: a sapphire substrate; an intermediate layer formed of gallium nitride with random crystal directions and provided on the sapphire substrate; and at least one or more semiconductor layers each of which is formed of a gallium nitride single crystal and that are provided on the intermediate layer.

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Patent Owner(s)

Patent OwnerAddress
DEXERIALS CORPORATIONTOKYO JAPAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akiyama, Shinya Tokyo, JP 5 1
Yagihashi, Kazuhiro Tokyo, JP 7 7

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