SiC MEMBER AND SUBSTRATE-HOLDING MEMBER FORMED OF SiC MEMBER, AND METHOD FOR PRODUCING THE SAME
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United States of America Patent
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Sep 5, 2019
app pub date -
Mar 4, 2019
filing date -
Mar 5, 2018
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A method for producing a SiC member includes a chemical vapor deposition (CVD) step of forming a SiC member formed of β-SiC by a CVD method and a heat treatment step of heat-treating the SiC member in an inert atmosphere at a temperature of higher than 2000° C. and 2200° C. or lower to partly transform β-SiC into α-SiC.
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