Vapor phase growth method

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United States of America Patent

PATENT NO 11072856
APP PUB NO 20190271072A1
SERIAL NO

16288244

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Abstract

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Provided is a vapor phase growth method according to an embodiment including loading a first substrate into a reaction chamber, generating a first mixed gas by mixing an indium containing gas, an aluminum containing gas, and a nitrogen compound containing gas, and forming a first indium aluminum nitride film on the first substrate by supplying the first mixed gas into the reaction chamber, the first substrate being rotated at a first rotation speed of 300 rpm or more.

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Patent Owner(s)

Patent OwnerAddress
NUFLARE TECHNOLOGY INC8-1 SHINSUGITA-CHO ISOGO-KU YOKOHAMA-SHI KANAGAWA 2358522 ?2358522

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Iyechika, Yasushi Matsudo, JP 41 667
Nago, Hajime Yokohama, JP 73 415
Tsukui, Masayuki Yokohama, JP 6 7

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