METHOD FOR PRODUCING GALLIUM NITRIDE STACKED BODY
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Jul 18, 2019
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Sep 6, 2017
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Sep 6, 2017
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There is provided a new and improved method for producing a gallium nitride stacked body that can produce a single-crystal layer with few crystal defects, the method including: an intermediate layer formation step of forming an intermediate layer (12) of gallium nitride with random crystal orientations on a substrate (11); and a single-crystal layer formation step of forming a single-crystal layer (13) of gallium nitride on the intermediate layer (12) by a liquid phase epitaxial growth method. Also the intermediate layer (12) may be formed by a liquid phase epitaxial growth method.
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