Plasma apparatus for high aspect ratio selective lateral etch using cyclic passivation and etching
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United States of America Patent
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May 18, 2021
Grant Date -
Jul 4, 2019
app pub date -
Mar 7, 2019
filing date -
Aug 2, 2017
priority date (Note) -
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Abstract
Methods and apparatus for laterally etching unwanted material from the sidewalls of a recessed feature are described herein. In various embodiments, the method involves etching a portion of the sidewalls, depositing a protective film over a portion of the sidewalls, and cycling the etching and deposition operations until the unwanted material is removed from the entire depth of the recessed feature. Each etching and deposition operation may target a particular depth along the sidewalls of the feature. In some cases, the unwanted material is removed from the bottom of the feature up, and in other cases the unwanted material is removed from the top of the feature down. Some combination of these may also be used.
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