Vapor phase growth apparatus, method of manufacturing epitaxial wafer, and attachment for vapor phase growth apparatus
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United States of America Patent
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May 26, 2020
Grant Date -
Jul 4, 2019
app pub date -
Jul 6, 2017
filing date -
Sep 5, 2016
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Abstract
A vapor phase growth apparatus includes a reactor, a plurality of flow paths, a cap, and an attachment. The reactor has an inlet through which vapor phase growth gas is introduced therein. The plurality of flow paths extend from the inlet to the outside of the inlet 8a. The cap has an introduction passage. The attachment has a branch path connectable to the introduction passage, and is attached to the cap. The branch path is branches in a tournament-tree shape from the introduction passage side toward the downstream side of the material gas, so that the branched paths are connected to the corresponding flow paths. Thus, a vapor phase growth apparatus capable of improving uniformity of the film thickness of an epitaxial layer grown on a substrate with high cost effectiveness, is provided.
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