SILICON MONOCRYSTAL PRODUCTION METHOD
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United States of America Patent
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Jun 20, 2019
app pub date -
Apr 26, 2017
filing date -
Jun 27, 2016
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A production method of a monocrystalline silicon includes: forming a shoulder of the monocrystalline silicon; and forming a straight body of the monocrystalline silicon. In forming the shoulder, the shoulder is formed such that a part of growth striations, which extend radially across the shoulder, has an outer end interrupted by another part of the growth striations not to reach a peripheral portion of the shoulder and that no remelt growth area with a height of 200 μm or more in a growth direction is generated.
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