STACKED SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

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United States of America Patent

APP PUB NO 20190181119A1
SERIAL NO

15834519

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Abstract

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A stacked semiconductor device is provided, including a first semiconductor structure, a second semiconductor structure and a bonding structure disposed between the first and second semiconductor structures. The first semiconductor structure and the second semiconductor structure include first conductive pillars and second conductive pillars, respectively. The first semiconductor structure is stacked above the second semiconductor structure. The bonding structure contacts the first conductive pillars and the second conductive pillars, wherein the bonding structure comprises conductive paths for electrically connecting the first conductive pillars and the second conductive pillars.

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Patent Owner(s)

Patent OwnerAddress
UNITED MICROELECTRONICS CORPHSIN-CHU CITY 300

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsu, Chien-En Singapore, SG 10 221
Xing, Guo-Zhong Singapore, SG 2 3

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