WAFER LEVEL GATE MODULATION ENHANCED DETECTORS
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United States of America Patent
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Issued Date -
May 16, 2019
app pub date -
Mar 21, 2017
filing date -
Mar 21, 2017
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Abstract
A detector or sensor including a transistor having a sensor element that generates a current when exposed to a stimulus such as light or a chemical, in one implementation, the sensor element is positioned between a transistor gate and a transistor channel. When the sensor element is not being exposed to the stimulus, the transistor outputs a first voltage on a transistor drain contact when the transistor inverts. When the sensor element is being exposed to the stimulus, the transistor outputs a second voltage on the transistor drain contact when the transistor inverts, where the second voltage is higher than the first voltage.
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