DRYNESS/WETNESS RESPONSIVE SENSOR HAVING FIRST AND SECOND WIRES SPACED 5 nm TO LESS THAN 20 um APART
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United States of America Patent
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Issued Date -
May 16, 2019
app pub date -
Dec 19, 2018
filing date -
Dec 19, 2018
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Abstract
The present invention improves the sensitivity and the responsiveness of a dryness/wetness responsive sensor utilizing a galvanic current, allowing for downsizing of the dryness/wetness responsive sensor. Instead of the conventional structure in which an anode electrode and a cathode electrode are stacked with an intervening insulator, the present invention employs a structure in which both electrodes run in juxtaposition with each other on an insulating substrate in the form of, for example, a comb-shaped electrode as shown in the drawing. By utilizing a semiconductor manufacturing process or any other micro/nano-fabrication technology, an inter-electrode distance can be extremely shortened as compared with the conventional sensors, allowing enhancing the sensitivity per unit footprint of the electrodes. Accordingly, a decrease in the size of the dryness/wetness responsive sensor can be easily achieved.
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