MANUFACTURING METHOD FOR LIGHT EMITTING DIODE CRYSTAL GRAINS

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United States of America Patent

APP PUB NO 20190140136A1
SERIAL NO

15833190

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A method for manufacturing light emitting diode crystal grains includes steps of providing a first substrate; forming a buffer layer on the first substrate; forming a UV blocking layer on buffer layer; and forming a plurality of light emitting diode crystal grains on the buffer layer. The emitting diode crystal grains together form a wafer. An auxiliary substrate is provided and coated with an adhesive layer. The auxiliary substrate is pressed to the wafer, the adhesive layer fills gaps between the light emitting diode crystal grains, and solidifies the adhesive layer. The second surface is irradiated and gasified. The first substrate is thus separated from the UV blocking layer and the adhesive layer is dissolved, thus achieving a plurality of light-emitting diode crystal grains.

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Patent Owner(s)

Patent OwnerAddress
ADVANCED OPTOELECTRONIC TECHNOLOGY INCNO 13 GONGYE 5TH RD HSINCHU INDUSTRIAL PARK HUKOU SHIANG HSINCHU HSIEN 303

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHIU, CHING-HSUEH Hukou, TW 31 49
HUANG, CHIEN-SHIANG Hukou, TW 15 12
HUNG, TZU-CHIEN Hukou, TW 73 311
LIN, YA-WEN Hukou, TW 74 143
PENG, CHIEN-CHUNG Hukou, TW 20 88
SHEN, CHIA-HUI Hukou, TW 60 161
TU, PO-MIN Hukou, TW 91 290

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