CMOS image sensor structure with crosstalk improvement

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United States of America Patent

PATENT NO 10957728
APP PUB NO 20190127036A1
SERIAL NO

16206763

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Abstract

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A semiconductor device includes a semiconductor substrate, a device layer over the semiconductor substrate, a first color filter in a top surface of the device layer and adjacent to an edge of the device layer, and a second color filter in the top surface of the device layer. The second color filter has substantially the same thickness and the same color as the first color filter.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Hung-Chang Tainan, TW 16 47
Hsu, Chun-Yuan Kaohsiung, TW 19 181
Yang, Szu-Hung Tainan, TW 10 99

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