THIN FILM TRANSISTOR
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United States of America Patent
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Issued Date -
Apr 25, 2019
app pub date -
Apr 3, 2017
filing date -
Apr 4, 2016
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Abstract
A thin film transistor includes at least an oxide semiconductor layer, a gate insulating film, a gate electrode, a source-drain electrode, and a protective film in this order on a substrate and further includes a protective layer. The oxide semiconductor layer includes an oxide constituted of In, Ga, Zn, Sn, and O. The atomic ratio of each metal element in the oxide semiconductor layer satisfies the following relationships: 0.09≤Sn/(In+Ga+Zn+Sn)≤0.25, 0.15≤In/(In+Ga+Zn+Sn)≤0.40, 0.07≤Ga/(In+Ga+Zn+Sn)≤0.20, and 0.35≤Zn/(In+Ga+Zn+Sn)≤0.55. The protective layer contains SiNx. The thin film transistor has a mobility of 15 cm2/Vs or more.
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