Light emitting device including porous semiconductor
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United States of America Patent
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Jun 2, 2020
Grant Date -
Apr 4, 2019
app pub date -
Oct 1, 2018
filing date -
Dec 4, 2007
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Abstract
A device comprising a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is disclosed. The device comprises a porous region. The device comprises a first layer disposed between the light emitting layer and the porous region. The device comprises a mask layer disposed between the porous region and the first layer. The device comprises a plurality of openings formed in the mask layer.
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