Metallic interconnect, a method of manufacturing a metallic interconnect, a semiconductor arrangement and a method of manufacturing a semiconductor arrangement

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United States of America Patent

PATENT NO 10734352
APP PUB NO 20190103378A1
SERIAL NO

16148316

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Abstract

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A metallic interconnection and a semiconductor arrangement including the same are described, wherein a method of manufacturing the same may include: providing a first structure including a first metallic layer having protruding first microstructures; providing a second structure including a second metallic layer having protruding second microstructures; contacting the first and second microstructures to form a mechanical connection between the structures, the mechanical connection being configured to allow fluid penetration; removing one or more non-metallic compounds on the first metallic layer and the second metallic layer with a reducing agent that penetrates the mechanical connection and reacts with the one or more non-metallic compounds; and heating the first metallic layer and the second metallic layer at a temperature causing interdiffusion of the first metallic layer and the second metallic layer to form the metallic interconnection between the structures.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AGCAMPBELL 1-15 NAUBIBERG GERMANY NEUBIBERG BAVARIA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Escher-Poeppel, Irmgard Duggendorf, DE 47 714
Hosseini, Khalil Weihmichl, DE 90 609
Lodermeyer, Johannes Kinding, DE 14 152
Mahler, Joachim Regensburg, DE 224 2135
Meyer, Thorsten Regensburg, DE 309 5595
Meyer-Berg, Georg Munich, DE 74 582
Nikitin, Ivan Regensburg, DE 77 501
Pufall, Reinhard Munich, DE 9 26
Riedl, Edmund Wald, DE 37 196
Schmidt, Klaus Nittendorf, DE 82 723
Schneegans, Manfred Vaterstetten, DE 57 290
Schwarz, Patrick Kallmuenz, DE 2 20

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