GATE STACK PROCESSES AND STRUCTURES
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United States of America Patent
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Issued Date -
Mar 28, 2019
app pub date -
Sep 22, 2017
filing date -
Sep 22, 2017
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Abstract
Structures for a field-effect transistor and methods for forming a structure for a field-effect transistor. A gate cavity is formed in a dielectric layer that includes a bottom surface and a plurality sidewalls that extend to the bottom surface. A gate dielectric layer is formed at the sidewalls and the bottom surface of the gate cavity. A work function metal layer is deposited on the gate dielectric layer at the sidewalls and the bottom surface of the gate cavity. A fill metal layer is deposited inside the gate cavity after the work function metal layer is deposited. The fill metal layer is formed in direct contact with the work function metal layer.
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