Semiconductor stack

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United States of America Patent

PATENT NO 10395924
APP PUB NO 20190088477A1
SERIAL NO

15758805

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Abstract

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A semiconductor stack includes a substrate made of silicon carbide, and an epi layer disposed on the substrate and made of silicon carbide. An epi principal surface, which is a principal surface opposite to the substrate, of the epi layer is a carbon surface having an off angle of 4° or smaller relative to a c-plane. In the epi principal surface, a plurality of first recessed portions having a rectangular circumferential shape in a planar view is famed. Density of a second recessed portion that is formed in the first recessed portions and is a recessed portion deeper than the first recessed portions is lower than or equal to 10 cm−2 in the epi principal surface.

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Patent Owner(s)

Patent OwnerAddress
SUMITOMO ELECTRIC INDUSTRIES LTDJAPAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nishiguchi, Taro Hyogo, JP 89 367
Saitoh, Yu Osaka, JP 52 197
Yamamoto, Hirofumi Hyogo, JP 141 760

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