Semiconductor device capable of suppressing cracks of through-hole protective film and short circuit of adjacent through-electrodes
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 5, 2019
Grant Date -
Feb 14, 2019
app pub date -
Feb 23, 2017
filing date -
Mar 3, 2016
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor device includes: a first substrate having connectors at a first surface; a second substrate bonded with the first substrate having through-holes in a stacking direction of the first and second substrates for respectively exposing the connectors; through-electrodes respectively arranged at through-holes and electrically connected with the connectors; and a protective film for integrally covering the through-electrodes. Frame-shaped slits are formed to respectively surround the through-holes when viewed in a normal direction with respect to the first surface of the first substrate. The protective film is separated by the slit into a region inside the slit and a region outside the slit.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully