SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Issued Date -
Feb 14, 2019
app pub date -
Aug 7, 2018
filing date -
Aug 10, 2017
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Abstract
A semiconductor substrate and a manufacturing method thereof are provided. The semiconductor substrate includes a base, a buffer layer, a mask layer and a first GaN layer. The buffer layer is disposed on the base, wherein doped regions are disposed in a portion of the surface of the buffer layer. The mask layer is disposed on the buffer layer and located on the doped regions. The first GaN layer is disposed on the buffer layer and covers the mask layer.
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