Replacement contact cuts with an encapsulated low-K dielectric
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United States of America Patent
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Apr 9, 2019
Grant Date -
Dec 20, 2018
app pub date -
Jun 19, 2017
filing date -
Jun 19, 2017
priority date (Note) -
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Abstract
Interconnect structures and methods of forming an interconnect structure. A sacrificial contact is arranged between a first gate structure and a second gate structure. The sacrificial contact extends vertically to a source/drain region. A section of the sacrificial contact is removed to form a cut opening extending vertically to the source/drain region. A first dielectric layer is deposited in the cut opening, and is then partially removed to open a space in the cut opening that is arranged vertically above the first dielectric layer. A second dielectric layer is deposited that fills the space in the cut opening and forms a cap on the first dielectric layer. The first dielectric layer has a first dielectric constant, and the second dielectric layer has a second dielectric constant that is greater than the first dielectric constant.
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