PHASE-SHIFT BLANKMASK AND PHASE-SHIFT PHOTOMASK
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Nov 22, 2018
app pub date -
May 9, 2018
filing date -
May 9, 2018
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
Disclosed are a phase-shift blankmask and a phase-shift photomask, which includes a phase-shift film made of silicon (Si) or a silicon (Si) compound on a transparent substrate and has a high transmittance characteristic. In the phase-shift blankmask according to the present disclosure, the phase-shift film has a high transmittance of 50% or higher, thereby achieving a micro pattern smaller than or equal to 32 nm, preferably 14 nm, and more preferably 10 nm for a semiconductor device, for example, a DRAM, a flash memory, a logic device.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully