Nano-electromechanical system (NEMS) device structure and method for forming the same

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United States of America Patent

PATENT NO 10676351
APP PUB NO 20180334383A1
SERIAL NO

16009668

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Abstract

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A NEMS device structure and a method for forming the same are provided. The NEMS device structure includes a substrate and an interconnect structure formed over the substrate. The NEMS device structure includes a dielectric layer formed over the interconnect structure and a beam structure formed in and over the dielectric layer, wherein the beam structure includes a plurality of strip structures. The NEMS device structure includes a cap structure formed over the dielectric layer and the beam structure and a cavity formed between the beam structure and the cap structure.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Hsin-Ping Hsinchu County, TW 59 108
Diaz, Carlos H Mountian View, US 267 4411
Goto, Ken-Ichi Hsinchu, TW 64 1102
Shue, Shau-Lin Hsinchu, TW 447 7036
Yang, Tai-I Hsinchu, TW 90 316

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