Semiconductor integrated circuit device and a method of manufacturing the same

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United States of America Patent

PATENT NO 10332901
APP PUB NO 20180315767A1
SERIAL NO

16026093

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A semiconductor device including a memory cell featuring a first gate insulating film over a semiconductor substrate, a control gate electrode over the first gate insulating film, a second gate insulating film over the substrate and a side wall of the control gate electrode, a memory gate electrode over the second gate insulating film arranged adjacent with the control gate electrode through the second gate insulating film, first and second semiconductor regions in the substrate positioned on a control gate electrode side and a memory gate side, respectively, the second gate insulating film featuring a first film over the substrate, a charge storage film over the first film and a third film over the second film, the first film having a first portion between the substrate and memory gate electrode and a thickness greater than that of a second portion between the control gate electrode and the memory gate electrode.

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Patent Owner(s)

Patent OwnerAddress
RENESAS ELECTRONICS CORPORATIONTOKYO 135-0061

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shukuri, Shoji Tokyo, JP 110 2533

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