Process integration approach of selective tungsten via fill
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United States of America Patent
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Apr 9, 2019
Grant Date -
Nov 1, 2018
app pub date -
Apr 26, 2017
filing date -
Apr 26, 2017
priority date (Note) -
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Abstract
Embodiments of the present disclosure generally relate an interconnect formed on a substrate and a method of forming the interconnect thereon. In an embodiment, a via and trench in a stack formed on the substrate. A bottom of the via is pre-treated using a first pre-treatment procedure. A sidewall of the via is pre-treated using a second pre-treatment procedure. A first metal fill material of a first type is deposited on the stack, in the via. A second metal fill material of a second type is deposited on the stack, in the trench.
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