INTEGRATED GALLIUM NITRIDE POWER AMPLIFIER AND SWITCH
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United States of America Patent
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Oct 16, 2018
Grant Date -
Oct 18, 2018
app pub date -
Apr 13, 2017
filing date -
Apr 13, 2017
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Abstract
A multi-band RF power amplifier circuit fabricated using GaN technology includes a RF power amplifier coupled to a multi-band RF switch without an intervening impedance matching network between the RF power amplifier and the multi-band RF switch. The multi-band RF switch includes a plurality of Unit HEMT cells. In one IC package, the RF power amplifier, the multi-band RF switch, a controller for controlling the switch and all connection therebetween are totally contained within the IC package. In another IC package, the RF power amplifier and the multi-band RF switch are disposed on a single substrate.
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