Reference column sensing for resistive memory
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United States of America Patent
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Nov 26, 2019
Grant Date -
Oct 18, 2018
app pub date -
Oct 28, 2015
filing date -
Oct 28, 2015
priority date (Note) -
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Abstract
A circuit includes a resistive memory cell in a memory array to store a memory state for the resistive memory cell. A reference cell in the memory array stores a reference memory state for the resistive memory cell. A function generator concurrently applies a read voltage to the resistive memory cell and the reference cell via a memory row address. A sensing circuit enables the function generator and monitors a target current received from the resistive memory cell when selected via a memory column address and monitors a reference current received when selected via a reference column address in response to the read voltage applied to the memory row address. A current comparator circuit in the sensing circuit compares a difference between the target current and the reference current to determine the memory state of the resistive memory cell.
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